Laser-Induced Metal Deposition on Semiconductors from Liquid Electrolytes

摘要

Maskless deposition of gold and copper from electrolyte solutions onto n-doped semiconductors (GaAs, Si) is investigated. The metal deposits are found to have lateral dimensions of about 1 micro and are in barrier contact with the semiconductor. The proposed deposition mechanism is governed by the electric fields resulting from the Dember effect, the p-n junction and the thermal emf. Maskless Deposition, Laser induced, Metal, Semiconductors, Liquid electrolytes, Micron lateral dimensions, Dember effect, Gallium arsenides silicon. (mjm)