Measurement of Localized Deep Levels and Wafer Non-Uniformities at 3-5 Semiconductor Heterojunctions.

摘要

Reported are the results of a two year program in which organic thin films were used to non-destructively study the properties of inorganic semiconductor epitaxial materials. The organic films can be applied to the substrate in vacuum in a non-destructive manner such that many bulk and surface properties of the semiconductor under study can be easily obtained. Once the characterization process is complete, the thin films can be removed without damage to the semiconductor substrate. This allows for the correlation of the fundamental materials properties of the semiconductor to the performance of devices fabricated on the same wafer. (rrh)