LOCALIZED LEVEL MEASURING EQUIPMENT AND METHOD FOR SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide localized level measuring equipment and method of a semiconductor wafer for accurately measuring the localized level of the desired area of a semiconductor wafer surface by relatively few processes.;SOLUTION: In the state of forming an inversion layer 33 and a depletion layer 35 by electrodes 32 and 34, a current generated by the re-coupling of charges at the localized level existing in the area of the depletion layer 35 flows through the inversion layer 33 between the electrode 36 and the electrode 31e. By measuring the current, the localized level like a boundary trap existing in the area of the depletion layer 35 right below the electrode 34 is measured.;COPYRIGHT: (C)2002,JPO