Reactions of Photogenerated Free Radicals at Surfaces of Electronic Materials.

摘要

The reactions of laser-generated free radicals at semiconductor surfaces are reviewed. The reactivities of fluorocarbon-derived and other fluorinating species can be explained by means of a simple thermochemical model which takes account only of chemical bonds made and broken at the surface of the materials. The photochemical processes which take place in surface films directly exposed to laser irradiation remain to be established. In addition to providing a better understanding of the chemical reactions involved in processes such as reactive etching and vapor deposition, the laser techniques may be directly applicable to advance fabrication methods. As more complex processing methods are developed, particularly involving mixtures of reactive gas-phase species, a full understanding of the free-radical reactions and surface chemistry will be required in order to optimize such processes and develop new ones. Reprints. (AW)