Ion Beam Processing of Diamond.

摘要

The objective of this work was to make an ohmic contact to diamond by the graded band gap concept whereby a smaller band semiconductor is intermixed epitaxially onto a larger band gap material. All three aspects of the program were successful: 1. The Cornell group carried out or provided facilities for ion beam deposited at other laboratories. 2. The UCSD group formed ohmic contacts to diamond by depositing Si on Diamond and ion-mixing. 3. The Cornell group demonstrated compound formation between Ni and BP (boron phosphide) which was chosen as a prototype of a high melting point refractory semiconductor with a wide band gap for evaluation of ion beam mixing. (jes)