Program to Study the Process Parameters of OMVPE and Their Relationship to the Properties of Ga(0.47)In(0.53)As on InP Substrates.

摘要

The purpose of the work was a study of the process parameters of the organometallic vapor phase epitaxy technique and their relationship to the properties of gallium indium arsenide lattice matched to indium phosphide. The study was an extension of an earlier study at atmospheric to low pressure conditions and shows that the effects of parasitic reactions can be essentially eliminated by low pressures. The work has established ranges of operation (temperature and pressures) for high quality material with a high degress of compositional uniformity over the substrate. Some problem areas have been designated which can be encountered in the growth of the lattice matched composition. Methods for their resolution have been presented. Specific criteria for scale-up have been identified and methods for their implementation presented. Keywords: Metalorganic chemical, Vapor deposition, Semiconductors. (JES)