In-Situ Diffraction and Imaging Studies of Hetero-Epitaxial Growth of Semiconductors

摘要

We are building a high resolution, energy filtered reflection high energy electron diffraction (RHEED) instrument for use in studying epitaxial growth, primarily in semiconductor strained layer systems, such as germanium silicon. This instrument is now at a minimal operational stage. Secondly, we are continuing in-situ studies of reactions in ultrathin (<100 A) films during annealing, using primarily an ultrahigh vacuum scanning electron microprobe instrument. To this end, we have developed special methods for analyzing RHEED patterns, and for numerical fitting of Auger lineshapes to determine stoichiometry. (mjm)