Crossbar Nanocomputer Development.

摘要

This effort expanded development of memristive nanoelectronic junction materials for high density memory and advanced logic applications. The focus of the effort was to develop metal oxide materials for resistive memory devices (RMDs), which are also known as memristors or resistive random access memory (Re-RAM or RRAM). The major goal was to fabricate such devices in a crossbar configuration (overlapping metal lines which create multiple junctions in an array format) which would enable ultra high density arrays of devices. These arrays could eventually be used for high density memory applications, or could replace transistors in conventional CMOS architectures. The deliverable for this effort was to demonstrate a 2 x 2 crossbar structure (4 crossover points) that could be tested and compared to simulations which were performed in parallel. Our efforts on this project resulted in successful materials selection of high-performance metal oxides, development of the 2 x 2 crossbar (and even a 12 x 12 crossbar) array, and successful modeling of resistive memory circuits.