Synthesis and Characterization of Gallium-Arsenic Compounds Containing a Four-Membered Ga-As-Ga-Cl or Ga-As-Ga-As Ring: Crystal Structures of (Me3SiCH2)2GaAs(SiMe3)22

摘要

The third example of an organogallium four-membered ring compound with arsenic,halogen mixed bridging, (Me3SiCH2)2GaAs(SiMe3)2Ga(CH2SiMe3)2CI, was prepared by the reaction of (Me3Si)3As with two equivalents of (Me3SiCH2)2GaC1. X-ray crystallographic analysis showed that the compound contains a nonplanar Ga-As-Ga-C1 ring. The crystals belong to the monoclinic system space group P21/c (C52h) with four molecules per unit cell of dimensions a 12.476, b 15.832, c22.279 A, Beta 108.87, V 4164(2) A3. The dimer (Me3SiCH2)2GaAs(SiMe3)22 was prepared by reaction of LiAs(SiMe3)2 and (Me3SiCH2)2GaC1. Its solid-state dimeric structure was established by single-crystal X-ray analysis.