Synthesis and characterization of single-source precursors to nanocrystalline GaP, GaPxAs1-x, and GaPxSb1-x. X-ray crystal structures of [Et2GaP(SiMe3)(2)](2), (Me3Si)(2)P[mu-GaEt2](2)As(SiMe3)(2), and (Me3Si)(2)P[mu-GaEt2](2)Sb(SiMe3)(2)

摘要

The 1:1 mole ratio reaction of Et2GaCl with P(SiMe3)(3) resulted in the formation of [Et2GaP(SiMe3)(2)](2) (1). The mixed-pnicogen compounds (Me3Si)(2)P[mu-GaEt2](2)As(SiMe3)(2) (2) and (Me3Si)(2)P[mu-GaEt2](2)Sb(SiMe3)(2) (3) were prepared from the 2:1:1 mole ratio reactions of Et2GaCl with P(SiMe3)(3) and As(SiMe3)(3), and P(SiMe3)(3) and Sb(SiMe3)(3), respectively. Compounds 2 and 3 were also synthesized by comproportionation reactions of 1 and [Et2GaAs(SiMe3)(2)](2), and 1 and [Et2GaSb(SiMe3)(2)](2), respectively. Characterization of 1, 2, and 3 was accomplished using multinuclear NMR, elemental analysis, mass spectrometry, and single-crystal X-ray crystallographic analysis. The X-ray crystal structures of compounds 1, 2 or 3 are reported. Thermolysis of 1, 2, and 3 results in the formation of nanocrystalline GaP, GaPxAs1-x, or GaPxSb1-x, respectively. Compound 3 represents the first example of a compound containing a P(mu-Ga)(2)Sb core. (C) 2000 Elsevier Science S.A. All rights reserved. [References: 19]