首页> 美国政府科技报告 >Synthesis and Characterization of (Me3SiCH2)3M.E(SiMe3) (M= Ga, E = P or As; M =In, E = P). X-ray Crystal Structures of (Me3SiCH2)Ga.P(SiMe3)3 AND (Me3Si CH2)3In.P(SiMe3)3
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Synthesis and Characterization of (Me3SiCH2)3M.E(SiMe3) (M= Ga, E = P or As; M =In, E = P). X-ray Crystal Structures of (Me3SiCH2)Ga.P(SiMe3)3 AND (Me3Si CH2)3In.P(SiMe3)3

机译:(me3siCH2)3m.E(sime3)的合成和表征(m = Ga,E = p或as; m = In,E = p)。 (me3siCH2)Ga.p(sime3)3和(me3si CH2)3In.p(sime3)3的X射线晶体结构

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Recent investigations in our laboratory have centered on the facile formation ofthe 13-15 bond by reactions of organo-group 13 reagents with either the silylpnicogen compounds E(SiMe3)3 (E= P or As) or their monolithium salts in solution. As a result of our efforts, we have isolated several new compounds containing the 13-15 covalent bond. Included in our results are compounds which exhibit dimeric structures in the solid-state and those in which two group 13 centers are bridged by a halogen atom and a group 15 atom. In addition, adducts of the type R3M.E(SiMe3)3(R = Me3SiCH2, M = In, E = As3; R = Ph3 or C6F5(4), M = Ga, E = As or P) have been isolated in our laboratory. Adducts of this type may find utility as potential single source precursors to binary 13-15 semiconductors; however, a review of the literature finds limited structural and thermal analysis data for adducts of this type. We report herein the synthesis, characterization, and thermal analysis of three new main group adducts, (Me3SiCH2)Ga. P(SiMe3)3 (1), (Me3SiCH2)3Ga.As(SiMe3)3 (2), and (Me3SiCH2)3In.P(SiMe3)3 (3). jg p. 2.

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