Design of Submicron-Scale Compound Semiconductor Devices for Optimum CircuitPerformance

摘要

Exact Energy Dispersion Relations for N-well Superlattice Configurations; PlasmaDomains in Extrinsic GaAs and Inp; Analytic Distribution for Charge Carriers in a Semiconductor Dominated by Equivalent Intervalley Scattering; Solution of a New Nonlinear Equation for the Distribution of Charge Carriers in a Semiconductor; Quasiclassical Mobility for Extrinsic Semiconductors; Fluctuations and Quantum Domains in Solid-State Microdevices; Distribution Functions and Fluid Variables in a Semiconductor; Criteria for Physical Domains in Laboratory and Solid-State Plasmas; and Nonlinear Electrical Conductivity for a Strongly Coupled Plasma. (rh)