Optimum experimental design for extended Gaussian disorder modeled organic semiconductor devices

摘要

We apply optimum experimental design (OED) to organic semiconductors modeled by the extended Gaussian disorder model (EGDM) which was developed by Pasveer et al. [Phys. Rev. Lett. 94, 206601 (2005)]. We present an extended Gummel method to decouple the corresponding system of equations and use automatic differentiation to get derivatives with the required accuracy for OED. We show in two examples, whose parameters are taken from Pasveer et al. [Phys. Rev. Lett. 94, 206601 (2005)] and Mensfoort and Coehoorn [Phys. Rev. B 78, 085207 (2008)] that the linearized confidence regions of the parameters can be reduced significantly by applying OED resulting in new experiments with a different setup.