Two Pseudobinary Semiconducting Silicides: Re(x)Mo(1-x)Si2 and Cr(x)V(1-x)Si2

摘要

Among the transition metal silicides there are several semiconducting phases,although compounds of a metallic electronic band structure are predominant. These narrow band-gap semiconductors include ReSi2 and CrSi2, with forbidden energy gaps believed to be in the range 0.1-0.2 eV and near 0.3 eV, respectively. The applications foreseen include the creation of infrared detectors for operation in the 3-5 and 8-14 microns bands of atmospheric transparency. ReSi2 may function at wavelengths beyond even the 9.4 microns recently reported for IrSi Schottky barrier devices. Furthermore, if homogeneous ternary silicide phases can be formed from these semiconducting materials and isomorphous metallic silicides, it should be possible to extend the photoresponse of detectors to even longer wavelengths. Reprints. (jes)