Reaction and Stability of Metal/Silicide Interfaces: Ti/MoSi2(001)

摘要

Interest in transition metal silicides arises, in part, because their lowresistivity and chemical stability makes them useful as contacts or gates to Si in very large scale integrated (VLSI) devices. Studies of silicide reaction have generally focused on thin-film processes, with insight being provided from ion backscattering measurements, electron microscopy, and other bulk-sensitive probes. Issues such as diffusing species and thin film phase transformations have been studied in detail. Likewise, the electronic states and atomic structures of bulk silicides and thin-film-related silicides have been probed with photoemission, Auger spectroscopy, electron diffraction, and ion scattering, with emphasis on CoSi2 and NiSi2 because of the prospect of forming epitaxial silicide-silicon structures. In contrast, little is known about the chemistry and stability of interfaces involving thin metal or semiconductor overlayers grown on oriented single-crystal surfaces of bulk silicides.