Laser Measurements of State-Resolved Ga and In Atom Sticking and Desorption on Metal and Semiconductor Surfaces.

摘要

Work is carried out on the dynamics of Gallium, Indium, and Arsenic scattering, Sticking, and desorption from silicon single crystals using laser probing of the Ga and In atoms and As dimer gas phase species. Results have been obtained for the binding energies of Ga and In on silicon. Structural patterns of Ga on silicon at various coverages have been determined by LEED studies. Results have been obtained for the binding energies have been determined by LEED studies. Results have been obtained for the desorption of different spin-orbit states and a model developed to explain the observed behavior. Desorption kinetics are also used to probe the Indium Arsenide and Gallium Arsenide heterostructures on silicon and the islanding behavior that occurs for the mixed systems. These results are relevant to the epitaxial growth of GaAs on silicon. (AW)