Design and Fabrication of High Speed Cards for the Transient Annealing TestSystem (TATS)

摘要

The manner in which the I/V curves change during and after irradiation is acomplex function of many factors, most of which have some type of very fast and/or logarithmic behavior with time. For example, in CMOS/SOS technologies as well as bulk CMOS technologies with planar hardened field oxides (no guardbands), a leakage path under the field oxide, around the end of the gate, may result in IC failure after a short pulse, high dose exposure. As the charge trapped in the field oxide anneals with time, the leakage current will decrease and finally disappear. The Transient Annealing Test System (TATS) was developed to study the time varying I/V characteristics of MOSFET and BIPOLAR transistors following exposure to radiation so that phenomena such as the described above could be investigated. The TATS is a modular system that accepts up to eight plug-in card sets, each set being essentially an independent test system. (RRH)