Relative Stabilities of Tetramethyl Orthosilicate and Tetraethyl Orthosilicate inthe Gas Phase

摘要

The stabilities of Si(OCH3)4 and Si(OC2H5)4 have been studied pyrolytically usinghighly dilute mixtures near atmospheric pressure conditions. FTIR spectrometric analyses of the disappearance of the reactants and the formation of various major stable products allow us to qualitatively account for the global difference in the measured overall first-order decay constants. The deposition of Silicon dioxide as an insulating film is an important part of microelectronic fabrication process. For the SiO2 film preparation, there have been attempts to replace the traditional dry oxidation and silane oxidation processes by silicon alkoxide CVD (chemical vapor deposition).