Four-Wave Mixing in the Far Infrared from Free Carriers in n-Type IndiumAntimonide

摘要

Third-order nonlinear-optical properties of semiconductors have been widelystudied at infrared frequencies near and above 1000 cm. Nonlinear-optical techniques have been extended into the far-infrared (FIR) region with the observation of third-harmonic generation, from free carriers in semiconductors. In this Letter we demonstrate resonant four-wave mixing (FWM) of two FIR frequencies in n-InSb. The dependences of the FWM signal on magnetic field, carrier concentration, and circular polarization indicate a resonant nonlinear process in which the plasma frequency plays a role different from that predicted by theory.