Efficient, High-Speed, Monolithic Optoelectronic Circuits Using Quantum-ConfinedStructures

摘要

This is the final report for DAAL03-89-K-0078, a program aimed at developinghighly efficient quantum-confined structures for use in optoelectronic circuits using MBE technology. The focus has been primarily on the development of the enabling technologies for high efficiency and speed in integrable diode lasers. Improved MBE growth control for in situ grown quantum-wire structures and the creation of UHV in situ processing techniques have been key technological outcomes of this work. In the device area, one high-risk, high-payoff emphasis has been the growth and analysis of quantum-wire diode lasers. A new growth procedure has been developed for more uniform closely-packed wire arrays. Another device emphasis has been the design and fabrication of highly-efficient vertical-cavity surface-emitting lasers. In this latter area, record device performance has been greatly facilitated by many new theoretical contributions. In this report, we shall attempt to summarize our progress in the materials and processing as well as the device areas.