Quantum Devices and Structures Using Si-Based Molecular Beam Epitaxy

摘要

The final report describes the technical tasks and accomplishments for 'QuantumDevices and Structures using Si Molecular Beam Epitaxy'. Research findings are summarized in five scientific areas, (a) study of strain in SiGe layers by reflection high energy electron diffraction (RHEED), (b) Silicide/Si quantum well structures, (c) development of theory and design for superlattice device, (d) miniband conduction in SiGe/Si superlattices, and (e) intersubband infrared absorption between valence minibands of symmetrically strained SiGe/Si superlattices.