Numerical Simulation of the Function of Scientific Instrumentation for Measuring the Speed of Electron Devices.

摘要

Implementation of three algorithms, (1) moment equation, (2) Monte Carlo, and (3) quantum Liouville equation algorithms, were used in a program to determine the high speed and high frequency operation of submicron electron devices. For a psuedomorphic high electron mobility transistor, high frequency, small signal, subpicosecond charge density waves were observed to form within the two dimensional electron gas. Large signal operation of the PHEMT indicated that the switching time of the device was governed by the longest relaxation effect, the energy relaxation time, estimated to be longer than two picoseconds. A simple two terminal device configuration was examined. It was determined that measurements of its transient behavior, would expose differences in the key relaxation times governing III-V device behavior, and provide the first direct measurement of nonequilibrium effects in 'semiconductor' devices.