Disordering in 69GaAs/71GaAs Isotope Superlattice Structures. (Reannouncementwith New Availability Information)

摘要

Undoped (69)GaAs/(71)GaAs isotope superlattice structures grown by molecular beamepitaxy on n-type GaAs substrates, doped by Si to approx. 3 x 10 exp(18) cu. cm, have been used to study Ga self-diffusion in GaAs by disordering reactions. In the temperature range of 850-960 deg C, the secondary ion mass spectrometry (SIMS) measured Ga self-diffusivity values showed an activation enthalpy of 4 eV, and are larger than previously compiled Ga self-diffusivity and Al-Ga interdiffusivity values obtained under thermal equilibrium and intrinsic conditions, which are characterized by a 6 eV activation enthalpy.