Activation of the Si(100)/Cl2 Etching Reaction at High Cl2 Translational Energies

摘要

Exposing a Si(100) surface to a pulsed beam of neutral Cl2 (Chlorine) with hightranslational energy results in etching at a rate faster than that seen with chlorine at thermal energies. The Cl2 beam used in these experiments is produced by laser vaporization of cryogenic films. It has a broad energy distribution which can be varied by changing laser energy and film thickness. Beams with mean energies as low as 0.4 eV result in etching >10 times faster than etching by thermal Cl2. When Cl2 beams are used which have considerable flux above 3 eV, the