Monolithic Integration of GaAs and Si Bipolar Devices for Optical InterconnectSystems. (Reannouncement with New Availability Information)

摘要

This work describes a monolithic technology for integrating GaAs with Si bipolardevices and demonstrating that such integration can be achieved without degrading devices and circuit performance. The design of a monolithic GaAs/Si optical receiver front-end with a bandwidth of 1GHz and an equivalent input noise current density of less than 3pA/ /Hz is presented. The measured pulse response of an experimental integrated receiver is less than 550ps FWHM, demonstrating the successful application of integrated GaAs/Si technology for optoelectronic applications.