Monolithic integration of singlemode AlGaAs optical waveguides at 830 nm with GaAs E/D-MESFETs using planar multifunctional epistructure (PME) approach

摘要

Singlemode AlGaAs optical waveguides at 830 nm have been monolithically fabricated together with ion-implanted E- and D-mode GaAs MESFETs. The waveguide TE and TM propagation losses are as low as 1.5 dB/cm with >-25 dB depolarisation. E- and D-mode FETs have V/sub T/=0.26 and -0.20 V, and g/sub m/=160 and 230 mS/mm, respectively.