Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective-area MOCVD

摘要

The monolithic integration of a strained layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by conventional atmospheric pressure metalorganic chemical vapor growth is discussed. Growth inhibition from a silicon dioxide mask is the mechanism used for selective-area growth rate enhancement. Variation in the width of the oxide stripe opening along the length of the device results in different quantum-well thicknesses, allowing the light generated in one selective growth region to propagate without significant absorption loss in an adjacent passive waveguide region.