Electrical and Structural Characterization of GaAs Vertical-Sidewall EpilayersGrown by Atomic Layer Epitaxy

摘要

Electrical and structural measurements have been performed on novel teststructures incorporating p-type GaAs epilayers grown by organometallic vapor phase atomic layer epitaxy on the vertical sidewalls of semi-insulating GaAs rods formed by ion-beam-assisted etching. Preliminary results indicate that the vertical-sidewall epilayers have excellent crystal quality and sufficient electrical quality to support a sidewall-epitaxy device technology. Some examples of candidate electronic, electrooptic, and photonic devices for vertical-sidewall fabrication are FETs, resistors, waveguides, modulators, and quantum-wire and quantum-dot lasers.