Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical communication

摘要

We report structural and optical properties of In{sub}(0.5)Ga{sub}(0.5)As/GaAs. quantum dots grown by atomic layer epitaxy (ALE) technique with atomic force microscope, transmission electron microscope and photoluminescence measurement. The ALE dots are grown with repeated periods of 1 mono-layer of InAs and GaAs. All reported ALE dots show 300 K-PL spectrum, and 1.276 μm (FWHM: 32.3 meV) of 300 K-PL peak was obtained in case of 7 periods of In{sub}(0.5)Ga{sub}(0.5)As ALE dots in a 100 A-thick In{sub}(0.1)Ga{sub}(0.9)As well. Dependence of growth temperature on the properties of ALE dots is also reported.