Low Threshold Voltage Continuous Wave Vertical-Cavity Surface-Emitting Lasers

摘要

Data are presented demonstrating a design and fabrication process for therealization of low-threshold, high-output vertical-cavity surface-emitting laser diodes with low series resistance. Lateral current confinement is achieved in the laser structures through the use of molecular-beam epitaxial regrowth over a 1000-A-thick patterned layer of low growth temperature AlGaAs incorporated into the p-type top mirror. A maximum cw output power in excess of 5.7 mW, at 300 K is demonstrated for 15-micrometer-diam devices. With increased top mirror reflectivity (through the addition of dielectric layers), the low series resistance of the design results in a bias voltage on o 1.8 V at a threshold current of 1.9 mA for 10-micrometer-diam devices.... Vertical-cavity surface-emitting lasers.