Silicon-Based Optoelectronic Materials, Symposium Held in San Francisco,California on April 12-14, 1993. Materials Research Society Symposium Proceedings, Volume 298

摘要

Although silicon is at the heart of the microelectronics revolution, its lowoptical efficiency has limited its use in optoelectronic applications. The potential significance of combining communications and display technology with microelectronics technology has generated considerable activity directed at developing a silicon-compatible optoelectronic material. The last few years have seen some interesting and potentially important advances in this area. Symposium B was organized as a forum for the various groups studying the physics, materials science, processing and applications of silicon-based optoelelectronic materials to present their most recent results in this rapidly growing field. Talks were organized into five basic areas: Si(1-x)Ge(x), rare earth-doped silicon (this session was organized jointly with symposium, E, Rare Earth Doped Semiconductors),silicon nanoparticles, porous silicon and applications. Many of the key research groups in each of these areas were represented at the meeting.