Ultrafast Processes in Tunneling Microstructure Devices.

摘要

A systematic investigation of ultrafast electron tunneling processes in semiconductor microstructures in presence of inter-valley (X-gamma) scattering, infrared radiation, phonons, and Coulomb interaction has been undertaken. Various important time constants involved in high speed electronic and photonic device operation were obtained such as the lifetime of a quasi-bound state, the time needed for in electron to tunnel into a well through a barrier, and the escape time for an electron to tunnel out from a well through a barrier. Our investigation under the period supported by the grant has resulted in ten journal publications.