In-situ Electron and Optical Spectroscopies of Translational and VibrationalActivated Bond Breaking and Formation on Semiconductors

摘要

This experimental research program seeks a basic understanding of the growth andprocessing of materials on semiconductor surfaces. Interactions of molecules with surfaces are investigated by varying the translational and vibrational energies of the impinging molecules from a molecular beam and probing the resulting species on the surface by in-situ time resolved electron energy loss spectroscopy, second harmonic generation, and two-photon photoemission. The reactions of H2, CO, C02, CH(x)F(4-x)(x=0-4), and CH3Cl on Si(100)2xl were studied in order to understand the chemistry of group IV elements: C, Si, and Ge. These studies will be extended to Ge2H6 and Si(111)7x7. The nature of bond breaking and formation of Ge and C on Si to form Ge/Si, SiC, and diamond will be investigated.... Molecular beam, Semiconductor, Silicon, Germanium, Silicon carbide, Diamond, Materials growth, Materials processing, In-situ probes.