In-Situ Electron and Optical Spectroscopies of Translational and VibrationalActivated Bond Breaking and Formation on Semiconductors

摘要

The main objective of this project is to understand the nature of adsorption,dissociation, reaction, and desorption on semiconductor surfaces when molecules are accelerated to enhance their translational energy in a supersonic beam and when the surface is irradiated by photons. These chemical processes are important for providing a scientific basis for understanding chemical vapor deposition and atomic layer epitaxy of thin films. Special emphasis was placed in understanding carbon containing molecules in order to search for suitable precursors for the growth of silicon carbide and diamond. The understanding, experience, and knowledge obtained in this study were instrumental in advancing a novel thin film growth technique based on supersonic jet epitaxy, which was successfully transferred to a small high technology company.