Alkoxide Precursors for Controlled Oxygen Incorporation during Metalorganic VaporPhase Epitaxy GaAs and Al(x)Ga(1-x)As Growth

摘要

Controlled oxygen incorporation in GaAs using Al-O bonding based precursors,dimethyl aluminum methoxide (DMALO) and diethyl aluminum ethoxide (DEALO), is presented in this investigation. A comparison study of oxygen incorporation kinetics between nominally undoped Al(x)Ga(1-x)As using trimethyl aluminum and DMALO-doped GaAs suggests that DMALO is one of the most important oxygen-bearing agents responsible for unintentional oxygen incorporation in A1(x)Ga (1-x)As. Controlled oxygen doping using DEALO is reported for the first time. Oxygen incorporation behavior, especially on the effect of the V/III ratio was found to be quite different fom the case of DMALO, mainly due to the differences between