Temperature Dependence of Single-Event Burnout in N-Channel Power MOSFET's

摘要

The temperature dependence of single-event burnout (SEB) in n-channel power metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated experimentally and analytically. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. This model is shown to agree with the experimental trends. SEU, DMOS, HEXFET, Single-Event-Burnout (SEB), N-Channel MOSFET, Temperature dependence.