Growth of lnAsSb Quantum Wells for Long-Wavelength (4 micrometers) Lasers

摘要

Molecular beam epitaxy (MBE) has been employed for the growth of quantum welllaser structures grown on GaSb substrates. These lasers consist of compressively strained InAsSb wells, tensile strained InAlAsSb barriers, and lattice matched AlAsSb cladding layers. A broad stripe diode laser with an emission wavelength of 3.9 um has operated cw up to 123 K, with a characteristic temperature T sub 0 of 30 K. Optical pumping of this laser structure has provided pulsed operation up to 162 K, with a peak output power of up to approx. 0.6 W at 110 K. Emission wavelengths as long as 4.5 um have been obtained in other laser structures with InAlAs barriers. In this article we present the key issues regarding the MBE growth of long wavelength strained quantum well lasers on GaSb, including shutter sequencing for interface control, analysis of characterization data, and laser results, with a comparison to double heterostructure devices.