InAsSb/InAlAsSb Strained Quantum-Well Diode Lasers Emitting at 3.9 micrometers

摘要

Strained quantum well diode lasers emitting at 3.9 micrometer have beenfabricated. The laser structure, grown on a GaSb substrate by molecular beam epitaxy, consists of compressively strained InAsSb active layers and tensile-strained InAlAsSb barrier layers, surrounded by AlAsSb cladding layers. Broad stripe lasers have exhibited pulsed operation up to 165 K, with threshold current density of 78 A/sq cm at 80 K. The characteristic temperature is 30 K up to 120 K. The devices operated cw up to 123 K, and the maximum cw power at 80 K is 30 mW/facet. Ridge waveguide lasers have operated cw up to 128 K, with cw threshold current at 80 K of 35 mA.