Oxygen-Based Deep Levels in Metalorganic Vapor Phase Epitaxy Indium GalliumArsenide

摘要

We have studied the defect engineering in metalorganic vapor phase epitaxyIn(x)Ga(1-x)As by controlled oxygen doping. Diethylaluminum ethoxide (DEALO) was used as an oxygen precursor to provide the intentional deep level incorporation. DEALO doping in In(x)Ga(1-x) As:Si with x < or = 0.25 resulted in the reduction in carrier concentrations. The Al and O incorporation with a DEALO mole fraction was weakly dependent on alloy composition for x < or = 0.25. The degree of electrical compensation, however, decreased as the Indium content increased at the same oxygen content. Deep level transient spectroscopy investigations on a series of In(x)Ga(1-x)As:Si:O samples with x ranging from 0 to 0.18 reveal a set of oxygen-derived deep levels, similar to those found in DEALO-doped GaAs. These characteristic deep levels appear to remain at a relatively constant energy with respect to the valence band, as compared to the rapid decrease in the conduction band of In(x)Ga(1-x)As with x. jg p.2.