Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy

摘要

Sb-doped ZnSe samples were deposited on the (001)GaAs substrate by metalorganic vapor-phase epitaxy (MOVPE). Isothermal capacitance transient spectroscopy (ICTS) and spectral analysis of deep-level transient spectroscopy (SADLTS) were used to characterize deep levels of Sb-doped ZnSe. The p-type sample grown by MOVPE at 490deg.C in the darkness shows three ICTS peaks. Three deep levels were observed in thee N-doped ZnSe deposited by MOVPE.