Antimonide-Based Compound Semiconductors for Low-Power Electronics.

摘要

Quantum wells formed from antimonide-based compound semiconductors are exploited in n-channel field-effect transistors (FETs) operating at high speeds with ultra-low power consumption. Compressive strain enhances hole mobilities making these materials strong candidates for p-channel FETs and complementary circuits. Recent work focuses on incorporation of gate oxides and integration of n- and p-channel FETs.