Investigation of a Normal Incident High Performance P-type Strained LayerIn(0.3)Ga(0.7) As/In(0.52)Al(0.48)As Quantum Well Infrared Photodetector

摘要

During this reporting period, we have made excellent progress towards the programgoals. A significant achievement was made in the development of a new compressionally strained p-type GaAs/InGaAs QWIP grown on GaAs by MBE. This new QWIP achieved two color detection with detective peaks at 8.9 um an 8.4 micrometers in the LWIR band and 5.5 micrometers in the MWIR band. This detector is under background limited performance (BLIP) at temperatures up to 70 K. The measured responsivity were found to be 24 mA/W and 45 mA/W for the two LWIR peaks respectively, while a responsivity of 13 mA/W was found for the MWIR peak; all at T=75 K. Th addition, a new InGaAs/AlGaAs on GaAs compressionally strained p QWIP was developed which exhibits extremely low dark currents and comparable responsivities when compared with the previous PCSL-QWIP. The measured responsivity was found to be 38 mA/W an 8mA/W at T=77 K, with the detective peaks at 7A and 5.5 micrometers, respectively. The detector is under BLIP conditions at T=63 K with applied biases from -3 V to +3 V. (jg).