Laser Beam Induced Current (LBIC) Study of IR Detector Materials.

摘要

Summary of activities and results: 1. Demonstration of IR-LBIC spatial mapping of a MCT-FPA device using a 1450nm laser from both back and front sides; 2. Unusual LBIC spatial mapping results of a MCT-FPA device from the front (electrode) side using a 532nm laser; 3. Demonstration of LBIC spatial mapping of an InAs/GaSb IR detector using a 532 nm laser at 10 K; 4. PL spatial mapping of an isolated dislocation in GaAs, leading to general understanding of the interplay between point and extended defects on carrier diffusion in semiconductors; 5. PL spatial mapping of Cd le epilayers with different growth conditions; 6. PL spatial mapping of ZnTe epilayers with different growth conditions, from front surface and cleaved edge; 7. MCT epilayer transmission and reflection measurements.