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Charge Sharing in (CdZn)Te Pixel Detector Characterized by Laser-Induced Transient Currents

机译:(CdZn)Te像素探测器中的电荷共享其特征在于激光感应的瞬态电流

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摘要

Performance of the (CdZn)Te pixelated detectors heavily relies on the quality of the underlying material. Modern laser-induced transient current technique addresses this problem as a convenient tool for characterizing the associated charge distribution. In this paper, we investigated the charge sharing phenomenon in (CdZn)Te pixel detector as a function of the charge collected on adjacent pixels. The current transients were generated in the defined 4 mm spots using 660 nm laser illumination. Waveforms measured on the pixel of interest and its surroundings were used to build the maps of the collected charge at different biases. The detailed study of the maps allowed us to distinguish the charge sharing region, the region with a defect, and the finest part in terms of the performance part of the pixelated anode. We observed the principal inhomogeneity complicating the assignment of the illuminated spot to the nearest pixel.
机译:(CdZn)Te像素化检测器的性能在很大程度上取决于基础材料的质量。现代的激光感应瞬态电流技术作为表征相关电荷分布的便捷工具解决了这个问题。在本文中,我们研究了(CdZn)Te像素检测器中的电荷共享现象,它是在相邻像素上收集的电荷的函数。使用660 nm激光照射在定义的4 mm光斑中产生电流瞬变。在感兴趣的像素及其周围环境上测量的波形用于构建在不同偏压下收集的电荷的图。对图的详细研究使我们能够根据像素化阳极的性能部分区分电荷共享区域,存在缺陷的区域和最精细的部分。我们观察到了主要的不均匀性,使照明点到最近像素的分配变得复杂。

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