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Lifetime of dissipation-less state of quantum Hall electron systems in the bistable regime

机译:双稳态量子霍尔电子系统的无耗散状态寿命

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摘要

Dynamic properties of the thermal bistability associated with the current-induced breakdown of the quantum Hall effect are studied. When the current increases, the critical current of transition from the dissipation-less quantum Hall state to a dissipative breakdown state at a filling factor of nu = 2 is found to fluctuate from one run of current increase to another, giving compelling evidence that the transition be stochastic. The rate of escape from the dissipation-less state to the dissipative state is derived from the histogram of critical current. The escape rate is found to significantly increase as the current (or the Hall electric field) increases, indicating that the statistical probability of the dissipative state continuously increases as the current increases above a lower critical value. A consistent picture of the breakdown is suggested, where the transition is triggered by fluctuation due to heat or noise in the bistable regime.
机译:研究了与电流引起的量子霍尔效应击穿相关的热双稳态的动态特性。当电流增加时,发现填充电流为nu = 2时,从无耗散量子霍耳状态到耗散击穿状态的临界电流会从一次电流增加到另一次波动而波动,这提供了令人信服的证据:是随机的。从无耗散状态到耗散状态的逃逸率是从临界电流的直方图得出的。发现逃逸率随着电流(或霍尔电场)的增加而显着增加,表明耗散状态的统计概率随着电流增加到较低的临界值而持续增加。建议使用一致的击穿图,其中双稳态由热或噪声引起的波动触发转变。

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