Growth and characterization of strain-compensated InGaAs/GaAsSb type II multiple quantum wells on InP substrate

摘要

Strain-compensated InGaAs/GaAsSb type II multiple quantum wells (MQWs) were grown by molecular beam epitaxy (MBE) and their optical and electrical properties were studied. High-quality strain-compensated type II MQWs were successfully grown, which have longer emission wavelength than that of lattice-matched type II MQWs. PL peak energy at 300 K of the strain-compensated type II MQWs, where the InGaAs layer has 0.6% tensile strain and GaAsSb layer has 0.6% compressive strain, shows a red-shift of 43 meV, which is 12 meV larger than the calculated energy shift of 31 meV. In addition, the PL intensity and the electron mobility of the strain-compensated MQWs are comparable to those of the lattice-matched MQWs, suggesting that the crystal quality of the strain-compensated MQWs is good and are very promising for low dark current photodiodes in the 2 μm wavelength region.