Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors

摘要

We report the fabrication and characterization of a planar-type resonant tunneling device-field effect transistor (RTD-FET) hybrid circuit. Our hybrid circuit utilizes in-plane-type gates, which can control the potential of the quantum RTD quantum dot (QD) and FET channel. Transport measurements through the fabricated RTD-FET hybrid circuit exhibited the shift of the negative differential resistance peaks both as functions of the RTD gate and the FET gate. The slope of the current contour plot showed that the coupling capacitance of the FET gate to the QD is 1/20 of that of the FET gate. Our hybrid circuit successfully showed multi-valued inverter characteristics. (C) 2007 Elsevier B.V. All rights reserved.