Electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates

摘要

We present atomistic theory of electronic and optical properties of a single InAs quantum dot grown on a pyramidal InP nanotemplate. The shape and size of the dot is assumed to follow the nanotemplate shape and size. The electron and valence hole single particle states are calculated using atomistic effective-bond-orbital model with second nearest-neighbor interactions. The electronic calculations are coupled to separately calculated strain distribution via Bir-Pikus Hamiltonian. The optical properties of InAs dots embedded in InP pyramids are calculated by solving the many-exciton Hamiltonian for interacting electron and hole complexes using the configuration-interaction method. The effect of quantum-dot geometry on the optical spectra is investigated by a comparison between dots of different shapes. (c) 2006 Elsevier B.V. All rights reserved.