Efficient silicon light emitting diodes made by dislocation engineering

摘要

Efficient silicon-based light emitting diodes have been fabricated using the dislocation engineering method. Crucially this technique uses entirely conventional ULSI processes. The devices were fabricated by conventional low-energy boron implantation into silicon substrates followed by high-temperature annealing, and strong silicon band edge luminescence was observed. Dislocation engineering is also shown to reduce the thermal quenching for other material systems. Dislocation engineered beta-FeSi2 and Er light emitting devices were fabricated and room temperature electroluminescence at similar to1.5 mum was observed in both cases. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 11]