Numerical simulation and time-dependent quantum analysis of electron properties in multilayer spherical InGaAs/AlGaAs quantum dot

摘要

In this paper, the time-dependent numerical simulation of multilayer spherical InGaAs/AlGaAs quantum dot (MSQD) based on wave nature of electrons has been presented. The properties of the system solution of the time-dependent Schr?dinger coupled with the Poisson equations have been self-consistently solved and the Hartree and exchange-correlation potentials as well as the penetration of wave function in the barrier regions have been calculated. By applying quantum mechanics laws on multilayer spherical quantum dot the electron density, potential energy and current density of system have been analyzed. Calculations show that a small density of carriers penetrates into the classically forbidden regions of the barriers for a finite distance while the majority of density of carriers accumulates away from the barriers in the reservoir. The results show due to boundary effects the time evolution of the current density in the close system grows into a non-realized physical behavior.